NSS12100UW3TCG
Manufacturer:
On Semiconductor
Mfr.Part #:
NSS12100UW3TCG
Datasheet:
Description:
BJTs WDFN-3 SMD/SMT PNP 1.1 W Collector Base Voltage (VCBO):12 V Collector Emitter Voltage (VCEO):12 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Packaging | Reel |
| Halogen Free | Halogen Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP |
| Contact Plating | Tin |
| Frequency | 200 MHz |
| Number of Elements | 1 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 1.1 W |
| Power Dissipation | 1.1 W |
| Max Collector Current | 1 A |
| Collector Emitter Breakdown Voltage | 12 V |
| Transition Frequency | 200 MHz |
| Element Configuration | Single |
| Max Frequency | 200 MHz |
| Collector Emitter Voltage (VCEO) | 12 V |
| Max Breakdown Voltage | 12 V |
| Gain Bandwidth Product | 200 MHz |
| Collector Base Voltage (VCBO) | 12 V |
| Collector Emitter Saturation Voltage | 440 mV |
| Emitter Base Voltage (VEBO) | 5 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Max Cutoff Collector Current | 1 A |
| Transistor Type | PNP |
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